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| to-126 1. emitter 2. collector 3. base BD233/235/237 transistor (npn) features power dissipation p cm: 1.25 w (tamb=25 ) collector current i cm: 2 a collector-base voltage v (br)cbo : BD233 : 45 v bd235: 60 v bd237: 100 v operating and storage junction temperature range t j : 150 t stg : -65 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage BD233 bd235 bd237 v(br) cbo ic= 100 a, i e =0 45 60 100 v collector-emitter breakdown voltage BD233 bd235 bd237 v(br) ceo ic= 10ma, i b =0 45 60 80 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 5 v collector cut-off current BD233 bd235 bd237 i cbo v cb = 45v, i e =0 v cb = 60v, i e =0 v cb = 100v, i e =0 100 a emitter cut-off current i ebo v eb = 5v, i c =0 1 ma h fe(1) v ce = 2v, i c =150ma 40 dc current gain h fe(2) v ce =2v, i c = 1a 25 collector-emitter saturation voltage v ce(sat) i c =1a, i b = 100m a 0.6 v transition frequency f t v ce =10v, ic=250ma f =10mhz 3 mhz 1 2 3 b d233/235/237 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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